BF370,112 datasheet

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• Маркировка
  BF370,112
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF370,112 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: - Voltage - Collector Emitter Breakdown (max): 15V Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 4.5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 500 MHz DC Collector/Base Gain hfe Min: 40 at 10 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Maximum Power Dissipation: 500 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Other Names: 933544720112, BF370
• Количество страниц
  6 шт.
• Формат
  PDF

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• Размер файла
  56,39 KB

BF370,112 datasheet скачать

BF370,112 datasheet